Interlayer dielectric for passivation of an elevated integrated

Details Interlayer dielectric for passivation of an elevated integrated Interlayer dielectric for passivation of an elevated integrated

1999-05-06

2000-04-18

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257446, 257774, H01L 3300

Patent

active

060518677

ABSTRACT:
An integrated circuit sensor structure. The integrated circuit sensor structure includes a substrate which includes electronic circuitry. An interconnect structure is adjacent to the substrate. The interconnect structure includes conductive interconnect vias which pass through the interconnect structure. A dielectric layer is adjacent to the interconnect structure. The dielectric layer includes a planar surface, and conductive dielectric vias which pass through the dielectric layer and are electrically connected to the interconnect vias. The dielectric layer further includes an interlayer planarization dielectric layer adjacent to the interconnect structure, and a passivating layer adjacent to the interlayer planarization dielectric layer. The integrated circuit sensor structure further includes sensors adjacent to the dielectric layer. The interconnect vias and the dielectric vias electrically connect the electronic circuitry to the sensors.

REFERENCES:
patent: 4571626 (1986-02-01), Yamada
patent: 4739384 (1988-04-01), Higashi et al.
patent: 5929474 (1999-07-01), Huang et al.
patent: 5936261 (1999-08-01), Ma et al.

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