Interlaced photodiode array employing analog shift registers

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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357 30, 250211J, 357 59, H01L 2978, H01L 2714, H01L 3100, H01J 3912

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active

040878333

ABSTRACT:
A photodiode array employing an analog shift register with a line of interlaced photodiodes. Alternate diodes are coupled to one of a pair of analog shift registers which are disposed on opposite sides of the line of photodiodes. An "anti-blooming" polysilicon line and a "transfer" polysilicon line are disposed along each side of the line of photodiodes adjacent to the shift registers. Each of the diffused region forming the photodiodes are coupled by a metal line to another diffused region formed between the anti-blooming and transfer polysilicon lines. This latter region acts as a remote, common region for both the anti-blooming function and transfer function.

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Tseng et al., "Optimization of a Solid State Image Sensor," 3rd Int. Conf. Tech. and Applications Charge Coupled Devices, Edinburgh, (9/76), Proc. pp. 75-84.

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