Interhalogen cleaning of process equipment

Details Interhalogen cleaning of process equipment Interhalogen cleaning of process equipment

1991-05-16

1996-10-15

El-Arini, Zeinab

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 3, 134 21, 134 221, 134 37, B08B 308, B08B 908

Patent

active

055650384

ABSTRACT:
An improved method and apparatus for removing accumulated films from processing equipment. Accumulated films are removed without disassembling the equipment and by introducing an interhalogen gas into the chamber where it reacts with the accumulated films while only slightly or not reacting at all with the processing chamber or its internal parts. The interhalogens and its products formed are volatile and are easily removed by a vacuum. The noncorrosive reaction takes place without needing a plasma and unlike HCl, the reaction take place from about room temperature to 300.degree. C.

REFERENCES:
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4975144 (1990-12-01), Yamazaki et al.
patent: 5011705 (1991-04-01), Tanaka
Ibbotson et al., "Selective Interhalogen Etching of Tantalum Compounds and Other Semiconductor Materials", Apr. 15, 1985, Applied Physics Letter, vol. 46, No. 8, pp. 794-796.
Ibbotson et al., "Plasmaless Dry Etching of Silicon with Fluorine-Containing Compounds", Nov. 15, 1984, Applied Physics Letter, vol. 56, No. 10, pp. 2939-2942.
Saito, et al., "Plasmaless Cleaning Process of Silicon Surface Using Chlorine Trifluoride", Mar. 19, 1990, Applied Physics Letter, vol. 56, No. 12, pp. 1119-1121.
In-Situ Plasma Cleaning Of LPCVD Tubes by David W. Benzing and Ching C. Tang, Benzing Technologies, Inc., Santa Clara, CA 35 pages.

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