Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1998-02-17
2000-03-14
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
H01L 2980, H01L 31112
Patent
active
06037618&
ABSTRACT:
An integrated transistor device operates with a linear triode vacuum tube like characteristic with a very low output impedance and a large interaction between the gate and drain potentials. The drain current of a first transistor is connected directly to the source of a second transistor which has a low input impedance matching the output impedance of the first transistor. The gate of the second transistor is held at a positive potential and functions to provide isolation of the varying drain signal from the drain of the first transistor and to provide a high impedance at the output terminal. This device structure provides high input impedance, high current gain, high output impedance and a linear operating characteristic.
REFERENCES:
Sedra et al, Microelectronic Circuits, pp 320-321, .COPYRGT. 1987.
Hall John H.
Rough J. Kirkwood H.
Linear Integrated Systems, Inc.
Meier Stephen D.
Woodward Henry K.
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