Intergrated circuit for programming resistive memory cells

Details Intergrated circuit for programming resistive memory cells Intergrated circuit for programming resistive memory cells

2008-07-15

2008-07-15

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S158000, C365S148000

Reexamination Certificate

active

07400528

ABSTRACT:
Methods and devices for programming conductive bridging RAM (CBRAM) memory cells improve the cycle stability by ensuring that the memory cells are erased before being written to anew. Optionally, in the event of overwriting the memory cells, memory cells may be written to only when the writing operation would alter the cell content (i.e., the state of bit stored in the memory cell is being changed from a logical 0 to a logical 1 or vice versa).

REFERENCES:
patent: 5883827 (1999-03-01), Morgan
patent: 7088608 (2006-08-01), DeHerrera et al.
patent: 2003/0185036 (2003-10-01), Gilton et al.
patent: 2003/0209971 (2003-11-01), Kozicki
patent: 1482513 (2004-12-01), None
patent: 1308711 (1973-03-01), None

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