Intergranular insulation type polycrystalline ceramic semiconduc

Details Intergranular insulation type polycrystalline ceramic semiconduc Intergranular insulation type polycrystalline ceramic semiconduc

1974-07-10

1976-01-20

Sebastian, Leland A.

Compositions

Electrolytes for electrical devices

106 733, H01B 302

Patent

active

039336689

ABSTRACT:
An intergranular insulation type semiconductive ceramic composition comprising a major proportion of strontium titanate (SrTiO.sub.3), a minor amount of niobium oxide (Nb.sub.2 O.sub.5) or tantalum oxide (Ta.sub.2 O.sub.5), a minor amount of either germanium oxide (GeO.sub.2) or zinc oxide (ZnO) and having diffused therein either bismuth oxide (Bi.sub.2 O.sub.3) or a mixture of bismuth oxide, lead oxide (PbO) and boric oxide (B.sub.2 O.sub.3). The material is especially useful as a capacitor.

REFERENCES:
patent: 2525627 (1950-10-01), Wainer
patent: 2829979 (1958-04-01), Calis
patent: 2829979 (1958-04-01), Calis
patent: 3028248 (1962-04-01), Glaister
patent: 3033907 (1962-05-01), Rue
patent: 3033907 (1962-05-01), Rue
patent: 3074804 (1963-01-01), Planer et al.
patent: 3080239 (1963-03-01), Zlotnick
patent: 3080239 (1963-03-01), Zlotnick
patent: 3352697 (1967-11-01), Fujiware et al.
patent: 3352697 (1967-11-01), Fujiware et al.

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