Interferometric process and apparatus for the measurement of the

Optics: measuring and testing – By dispersed light spectroscopy – Utilizing a spectrometer

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G01B 902

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041474350

ABSTRACT:
An interferometer system and process for detecting etch rates in opaque materials, such as silicon or metal, has means for producing a pair of parallel light beams, one of which is directed to the surface of the opaque material and the other of which is directed to the surface of an adjacent transparent masking material. The rate of etch of the opaque material is determined by detecting and recording the changes of light intensity due to interference between the beam reflected from the opaque layer and the beam reflected from the opaque layer beneath the transparent masking material.

REFERENCES:
patent: 3612692 (1971-10-01), Kruppa
patent: 3930730 (1976-01-01), Laurens et al.

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