Interferometer for measuring thickness variations of semiconduct

Details Interferometer for measuring thickness variations of semiconduct Interferometer for measuring thickness variations of semiconduct

1997-05-30

1999-06-01

Kims, Robert H.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356357, 356360, G01B 902

Patent

active

059092823

ABSTRACT:
Thickness variations of semiconductor wafers are measured by interfering two beams of infrared light that are relatively modified by reflections from opposite side surfaces of the wafers. Non-null interferometric measurements are made by illuminating the wafers with diverging beams and subtracting errors caused by varying angles of incidence. Null interferometric measurements are made of both thickness variations and flatness. Infrared light, which can transmit through the wafers, is used for measuring thickness variations; and visible light, which cannot transmit through the wafers, is used for simultaneously measuring flatness.

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