Interference multilayer capping design for multilayer...

Details Interference multilayer capping design for multilayer... Interference multilayer capping design for multilayer...

2007-11-27

2007-11-27

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

10864945

ABSTRACT:
An extreme ultraviolet lithography (EUVL) mask blank may include a multilayer (ML) capping structure on the ML reflective coatings on the substrate. The ML capping structure may include alternating layers of a capping material, e.g., ruthenium, and a material with a lower EUV absorption coefficient, e.g., silicon. The top layer of the ML structure may be a layer of the capping material. Capping interfaces between the layers may provide constructive interference of reflected light.

REFERENCES:
patent: 6998200 (2006-02-01), Lee

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