Interfacing at low temperature using CMOS technology

Details Interfacing at low temperature using CMOS technology Interfacing at low temperature using CMOS technology

2011-03-22

2011-03-22

Zweizig, Jeffrey S (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

Integrated structure

C327S527000, C327S567000

Reexamination Certificate

active

07911265

ABSTRACT:
This invention concerns interfacing to electronic circuits or systems operating at low temperature or ultra-low temperature using complementary metal-oxide semiconductor (CMOS) technology. Low temperature in this case refers to cryogenic temperatures in particular, but not exclusively, to the 4.2 K region. Ultra-low temperatures here refers to the sub-1 K range, usually accessed using dilution refrigerator systems. The electronic circuits comprise a controller (for writing and manipulation), an observer (for readout and measurement) circuits, or both, fabricated from ultra-thin silicon-on-insulator (SOI) CMOS technology.

REFERENCES:
patent: 5861336 (1999-01-01), Reedy et al.
patent: 6599781 (2003-07-01), Li

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