Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Patent
1992-12-22
1994-02-15
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
257192, 257262, 257368, 257369, 307475, H01L 29161, H01L 29205, H01L 29225
Patent
active
052869857
ABSTRACT:
Interface circuits for connecting gallium arsenide circuits with silicon circuits with the interface circuits using a mix of gallium arsenide and silicon devices. Preferred embodiments (200) connect gallium arsenide buffered FET logic circuits (202) with silicon CMOS circuits with a two branch interface circuit under CMOS supply voltages with a BFL logic branch (208-210) merged with a CMOS inverter branch (204-206).
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patent: 4710478 (1987-12-01), Yoder
patent: 4732870 (1988-03-01), Mimura
patent: 4774205 (1988-09-01), Choi et al.
Shichijo et al, "Co-Integration of GaAs MESFET and Si CMOS Circuits", IEEE Electron Device Letters, vol. 9, No. 9, Sep. 1988.
Donaldson Richard L.
Kesterson James C.
Ngo Ngan
Stoltz Richard A.
Texas Instruments Incorporated
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