Interface circuit operable to perform level shifting between a f

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...

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257192, 257262, 257368, 257369, 307475, H01L 29161, H01L 29205, H01L 29225

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active

052869857

ABSTRACT:
Interface circuits for connecting gallium arsenide circuits with silicon circuits with the interface circuits using a mix of gallium arsenide and silicon devices. Preferred embodiments (200) connect gallium arsenide buffered FET logic circuits (202) with silicon CMOS circuits with a two branch interface circuit under CMOS supply voltages with a BFL logic branch (208-210) merged with a CMOS inverter branch (204-206).

REFERENCES:
patent: 4507846 (1985-04-01), Ohno
patent: 4554569 (1985-11-01), Tove et al.
patent: 4654548 (1987-03-01), Tanizawa et al.
patent: 4710478 (1987-12-01), Yoder
patent: 4732870 (1988-03-01), Mimura
patent: 4774205 (1988-09-01), Choi et al.
Shichijo et al, "Co-Integration of GaAs MESFET and Si CMOS Circuits", IEEE Electron Device Letters, vol. 9, No. 9, Sep. 1988.

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