Interdigitated Schottky diode

Details Interdigitated Schottky diode Interdigitated Schottky diode

1986-12-22

1988-05-17

Clawson, Jr., Joseph E.

357 22, 357 68, H01L 2948

Patent

active

047454458

ABSTRACT:
A high frequency, e.g. millimeter wave, semiconductor diode structure includes a buried layer of n.sup.+ -type material and a surface layer of lightly doped n-type material on which a Schottky barrier contact is disposed. The n.sup.+ -type layer provides a low series resistance thus permitting high frequency operation. The structure is compatible with MESFET processing techniques and may thus be incorporated in an integrated circuit.

REFERENCES:
patent: 3896473 (1975-07-01), Di Lorenzo et al.
patent: 4212022 (1980-07-01), Beneking
patent: 4238763 (1980-12-01), Gray et al.
patent: 4338616 (1982-07-01), Bol
patent: 4400713 (1983-08-01), Bauge et al.
patent: 4463322 (1984-07-01), Scott et al.
patent: 4641174 (1987-02-01), Baliga
"GaAs on Sapphire," Electronics, vol. 41, #14, Jul. 8, 1968, pp. 51, 52.
A. Burkitt, "Solid-State Progress in Ckts. and Dev.," Electronic Engineer, Oct. 1975, pp. 50-52.
M. Das et al., "Two-Layer Microwave FET . . . , " IEEE Trans. on Elec. Dev., vol. ED-24, #6, Jun. 1977, pp. 757-761.
R. Van Tuyl et al., "GaAs MESFET Logic with 4-GHZ Clock Rate," IEEE J. OFS-S Ckts, vol. SC-12, #5, Oct. 1977, pp. 485-496.
D. Jados, "Buried Field Effect Trans.," IBM Tech. Discl. Bull., vol. 13, #6, Nov. 1970, pp. 1431-1432.
H. Matino, "Microwave GaAs Schottky Gate FET," Electr. & Comm. in Japan, vol. 56-C, #7, 1973, pp. 90-96.
M. Fukuta et al., "Power GaAs MESFET w. High Draw-Source Break Volt.," IEEE Trans. on Microwave Theory & Tech., vol. MTT-24, #6, Jun. 1976, pp. 312-317.

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