Patent
1986-07-08
1988-09-20
Sikes, William L.
357 15, 357 16, 357 68, H01L 2714, H01L 2948
Patent
active
047729317
ABSTRACT:
A semiconductor photodetector is formed of interdigitated, metal-semiconductor-metal electrodes disposed on a surface of semi-insulating semiconductor material, gallium arsenide. Radiation such as infra-red or visible light is converted to an electric current flowing between the electrodes upon application of a bias voltage between the electrodes. A Schottky barrier at the junction of each electrode surface and the semiconductor surface limits current flow to that produced by photons of sufficient frequency, or energy, to overcome the Schottky barrier. Tunneling of charge carriers of the current under the Schottky barrier, which tunneling results from the entrapment of charge carriers on the semiconductor surface, is inhibited by the production of a doped surface layer upon the foregoing surface between the electrodes to repulse the charge carriers and prevent their entrapment at the surface. The doped surface layer is much thinner than an interaction region of the radiation in the semiconductor material and has sufficiently high resistance to permit the photodetector to function efficiently.
REFERENCES:
patent: 3700980 (1972-10-01), Belasco et al.
patent: 4478879 (1984-10-01), Baraona et al.
IEEE Electron Device Letters, vol. EDL-5, No. 12, Dec. 1984, pp. 531-532 entitled "Monolithic Integration of a Metal-Semiconductor-Metal Photodiode and a GaAs Preamplifier" by M. Ito et al.
Japanese Journal of Applied Physics, vol. 19 (1980), supplement 19-1, pp. 459-464 entitled "Metal-Semiconductor-Metal Photodetector for High-Speed Optoelectronic Circuits" by T. Sugeta et al.
IEEE Transactions on Electron Devices, vol. ED-32, No. 6(1985) p. 1034, entitled "The Dsi-Diode--A Fast Large Area Optoelectronic Detector" by Roth et al.
Applied Physics Letters vol. 46, No. 10, 5/85, pp. 981-983 entitled "AlGaAs/GaAs p-i-n Photodiode/Preamplifier Monolithic Photoreceiver Integrated On a Semi-Insulating GaAs Substrate" by O. Wada et al.
Electric Letters, vol. 22, No. 3, pp. 147-148, Jan. 30, 1986, "Monolithic GaAs Photoreceiver For High-Speed Signal Processing Applications" by W. S. Lee.
Epps Georgia Y.
IBM Corporation
Sikes William L.
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