Interdigitated conductive lead frame or laminate lead frame...

Details Interdigitated conductive lead frame or laminate lead frame... Interdigitated conductive lead frame or laminate lead frame...

2011-08-09

2011-08-09

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S690000, C257SE23079, C257S691000

Reexamination Certificate

active

07994632

ABSTRACT:
A GaN die having a plurality of parallel alternating and closely spaced source and drain strips is contacted by parallel coplanar comb-shaped fingers of source and drain pads. A plurality of enlarged area coplanar spaced gate pads having respective fingers contacting the gate contact of the die. The pads may be elements of a lead frame, or conductive areas on an insulation substrate. Other semiconductor die can be mounted on the pads and connected in predetermined circuit arrangements with the GaN die.

REFERENCES:
patent: 5473512 (1995-12-01), Degani et al.
patent: 5856687 (1999-01-01), Kimura
patent: 5915164 (1999-06-01), Taskar et al.
patent: 5945730 (1999-08-01), Sicard et al.
patent: 6278264 (2001-08-01), Bursetin et al.
patent: 6740969 (2004-05-01), Hirashima
patent: 6906410 (2005-06-01), Aono et al.
patent: 7295453 (2007-11-01), Shiraishi et al.
patent: 2004/0200886 (2004-10-01), Cheah
patent: 2005/0139891 (2005-06-01), Beach et al.

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