Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-07-07
2008-03-25
Pham, Hoai v (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000, C257S774000, C257SE23145
Reexamination Certificate
active
07348672
ABSTRACT:
An interconnect architecture with improved reliability. An interconnect with rounded top corners is inlaid in a dielectric layer. A filler borders the interconnect along the corners of the interconnect.
REFERENCES:
patent: 4801559 (1989-01-01), Imaoka
patent: 6107687 (2000-08-01), Fukada et al.
patent: 6208008 (2001-03-01), Arndt et al.
patent: 6368953 (2002-04-01), Petrarca et al.
patent: 6630402 (2003-10-01), Hshieh et al.
patent: 6917108 (2005-07-01), Fitzsimmons et al.
patent: 2002/0092763 (2002-07-01), Denning et al.
patent: 2003/0027092 (2003-02-01), Wolgamuth et al.
patent: 2003/0114000 (2003-06-01), Noguchi
patent: 2004/0187304 (2004-09-01), Chen et al.
patent: 2004/0214425 (2004-10-01), Lin et al.
Chen Hsien-Wei
Chen Hsueh-Chung
Jeng Shin-Puu
Birch & Stewart Kolasch & Birch, LLP
Pham Hoai v
Taiwan Semiconductor Manufacturing Co. Ltd.
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