Interconnects with improved electromigration reliability

Details Interconnects with improved electromigration reliability Interconnects with improved electromigration reliability

2011-08-02

2011-08-02

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE23155

Reexamination Certificate

active

07989956

ABSTRACT:
An interconnect structure in a semiconductor device may be formed to include a number of segments. Each segment may include a first metal. A barrier structure may be located between the plurality of segments to enable the interconnect structure to avoid electromigration problems.

REFERENCES:
patent: 6127260 (2000-10-01), Huang
patent: 6353269 (2002-03-01), Huang
patent: 6498384 (2002-12-01), Marathe
patent: 6731007 (2004-05-01), Saito et al.
patent: 6904675 (2005-06-01), Atakov et al.
patent: 2002/0109233 (2002-08-01), Farrar
patent: 2003/0173675 (2003-09-01), Watanabe et al.
patent: 2003/0183942 (2003-10-01), Harada

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