Interconnects with a dielectric sealant layer

Details Interconnects with a dielectric sealant layer Interconnects with a dielectric sealant layer

2005-07-19

2005-07-19

Graybill, David E. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S752000, C257S753000, C257S759000, C257S761000, C257S762000, C257S768000, C257S773000

Reexamination Certificate

active

06919636

ABSTRACT:
Leakage, capacitance and reliability degradation of interconnects fabricated in low-k dielectric materials, particularly porous low-k dielectric material, due to penetration by a barrier metal and/or barrier metal precursor during damascene processing is prevented by depositing a conformal, heat stable dielectric sealant layer on sidewalls of the low-k dielectric material defining the damascene opening. Embodiments include forming a dual damascene opening in a porous, low-k organosilicate layer, the organosilicate having a pendant silanol functional group, depositing a siloxane polymer having a silylating functional group which bonds with the pendant silanol group to form the sealant layer, depositing a Ta and/or TaN barrier metal layer by CVD or ALD and filling the opening with Cu or a Cu alloy.

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