Interconnects having sealing structures to enable selective...

Details Interconnects having sealing structures to enable selective... Interconnects having sealing structures to enable selective...

2008-03-28

2011-11-15

Nguyen, Thanh (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S762000, C257S774000, C257SE23010

Reexamination Certificate

active

08058710

ABSTRACT:
Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.

REFERENCES:
patent: 6077774 (2000-06-01), Hong et al.
patent: 6358832 (2002-03-01), Edelstein et al.
patent: 6597068 (2003-07-01), Petrarca et al.
patent: 2002/0042193 (2002-04-01), Noguchi et al.
patent: 2006/0220197 (2006-10-01), Kobrinsky

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