Interconnector line of thin film, sputter target for forming...

Details Interconnector line of thin film, sputter target for forming... Interconnector line of thin film, sputter target for forming...

1996-10-14

2010-11-30

Potter, Roy K (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

C438S128000

Reissue Patent

active

RE041975

ABSTRACT:
An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.

REFERENCES:
patent: 4302498 (1981-11-01), Faith, Jr.
patent: 4941032 (1990-07-01), Kobayashi et al.
patent: 4957549 (1990-09-01), Matsumoto et al.
patent: 5062885 (1991-11-01), Matsumoto et al.
patent: 5098649 (1992-03-01), Matsumoto et al.
patent: 5367179 (1994-11-01), Mori et al.
patent: 5514909 (1996-05-01), Yamamoto et al.
patent: 3911657 (1990-10-01), None
patent: 0 288 010 (1988-10-01), None
patent: 0 542 271 (1993-05-01), None
patent: 0 855 451 (1998-07-01), None
patent: 1 553 205 (2005-07-01), None
patent: 62-228446 (1987-10-01), None
patent: 62-235454 (1987-10-01), None
patent: 62-240738 (1987-10-01), None
patent: 64-25977 (1989-01-01), None
patent: A 01-134426 (1989-05-01), None
patent: 1-242733 (1989-09-01), None
patent: A 01-289140 (1989-11-01), None
patent: 4-48854 (1992-08-01), None
patent: A 04-323872 (1992-11-01), None
patent: 5-171434 (1993-07-01), None
patent: A 05-211147 (1993-08-01), None
patent: 5-239635 (1993-09-01), None
patent: 7-45555 (1995-02-01), None
patent: 2006-111969 (2006-04-01), None
Official Action issued by the Japanese Patent Office on Jan. 20, 2009, for Japanese Patent Application No. 2005-276819, and English-language Summary thereof.
Japanese Patent Office Action mailed Jan. 22, 2008 in counterpart Japanese Patent Application No. 2004-076172.
European Search Report dated Aug. 16, 1999.

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