Interconnection system in a semiconductor device

Details Interconnection system in a semiconductor device Interconnection system in a semiconductor device

1998-01-28

2000-02-01

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257764, 257770, H01L 2348, H01L 2352, H01L 2940

Patent

active

06020642&

ABSTRACT:
A semiconductor device has a contact plug made of a material other than tungsten, i.e., Ti and TiN films, and an interconnection pattern made of sputtered tungsten and connected to a silicon substrate through the contact plug. The tungsten film has mainly (200) and (211) orientations on the top of the insulator film to reduce the resistivity of the tungsten and has mainly (110) orientation on the exposed regions of the Ti and TiN films at the top of the contact plug.

REFERENCES:
patent: 5008730 (1991-04-01), Huang et al.
patent: 5312773 (1994-05-01), Nagashima
patent: 5523624 (1996-06-01), Chen et al.
patent: 5861671 (1999-01-01), Tsai et al.
patent: 5866947 (1999-02-01), Wang et al.
"Tungsten Wiring process technology for submicron era" Fukuda et al The Institute of Electronics, Information and Communication Engineers; Technical Report of IEICE; Nov. 1992; pp. 53-59.

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