Interconnection structure for semiconductor integrated circuits

Details Interconnection structure for semiconductor integrated circuits Interconnection structure for semiconductor integrated circuits

1977-10-19

1980-04-22

James, Andrew J.

357 65, 357 68, 357 71, H01L 2904, H01L 2348, H01L 2944

Patent

active

041997786

ABSTRACT:
In a semiconductor integrated circuit having polycrystalline silicon interconnections and metal interconnections, a low resistance layer, containing impurities to a high concentration for the polycrystalline silicon interconnections, is formed in predetermined parts of an undoped polycrystalline silicon layer which is deposited on a first insulator film on a semiconductor substrate, a second insulator film is deposited on the polycrystalline silicon layer under the state under which the undoped parts are left at least around through-holes to be formed, and the metal interconnections at least parts of which run in a direction intersecting the polycrystalline silicon interconnections are provided on the second insulator film, the necessary contacts between the metal interconnections and the polycrystalline silicon interconnections being made through the through-holes provided in the second insulator film in correspondence with the intersecting parts of both the interconnections.

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