Interconnection structure and method for designing the same

Semiconductor device manufacturing: process – Dummy metallization

Reexamination Certificate

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C257S758000, C257S760000, C438S128000

Reexamination Certificate

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06943129

ABSTRACT:
A wiring pattern has been enlarged by mutually different values, thereby forming two enlarged wiring patterns are formed. Then, regions where the two enlarged wiring patterns overlap each other are removed, thereby forming a dummy pattern. Alternatively, a simple-figure pattern made of simple figures is formed and a dummy pattern is formed using the simple-figure pattern. A gap that is not wider than a predetermined value is located in a final wiring pattern made of the wiring pattern and the dummy pattern is defined as an air gap region. Thus, an interconnection structure incorporating air gaps between wiring patterns is formed.

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