Semiconductor device manufacturing: process – Dummy metallization
Reexamination Certificate
2005-09-13
2005-09-13
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Dummy metallization
C257S758000, C257S760000, C438S128000
Reexamination Certificate
active
06943129
ABSTRACT:
A wiring pattern has been enlarged by mutually different values, thereby forming two enlarged wiring patterns are formed. Then, regions where the two enlarged wiring patterns overlap each other are removed, thereby forming a dummy pattern. Alternatively, a simple-figure pattern made of simple figures is formed and a dummy pattern is formed using the simple-figure pattern. A gap that is not wider than a predetermined value is located in a final wiring pattern made of the wiring pattern and the dummy pattern is defined as an air gap region. Thus, an interconnection structure incorporating air gaps between wiring patterns is formed.
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Hyoto Chihiro
Mukai Kiyoshi
Shibata Hidenori
Tsujikawa Hiroyuki
Matsushita Electric - Industrial Co., Ltd.
Sarkar Asok Kumar
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