Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2011-08-23
2011-08-23
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S690000, C257S758000, C257S734000, C257S773000, C257S774000, C438S602000, C438S605000, C438S618000, C438S622000, C438S624000, C438S629000, C438S639000, C438S652000, C438S667000
Reexamination Certificate
active
08004077
ABSTRACT:
A semiconductor device comprising: a substrate; a terminal on the substrate's first surface; a first electrode on the first surface connected to the terminal; an electronic element on the substrate's second surface; a second electrode connected to the electronic element; a groove on the second surface leading to the second electrode; a conductive portion inside the grove connected to the second electrode's rear face; a first wiring on the first surface connected to the first electrode; a second wiring connecting the first wiring and the terminal; a stress-absorbing layer between the substrate and terminal; a land connecting the first wiring and the second wiring, the land opening a part of the stress-absorbing layer and exposing the first wiring, the land being in a region surrounded by terminals, and the land being along a straight line connecting the centers of diagonal terminals, with the region between the terminals.
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Communication from European Patent Office regarding counterpart application, Nov. 24, 2010.
Hashimoto Nobuaki
Ito Haruki
Harness & Dickey & Pierce P.L.C.
Pham Thanh V
Seiko Epson Corporation
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