Interconnection method for semiconductor device comprising a hig

Details Interconnection method for semiconductor device comprising a hig Interconnection method for semiconductor device comprising a hig

1991-06-07

1993-02-02

Wilczewski, Mary

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505740, 505742, 437174, 437189, 437190, 437195, H01L 2128, H01L 21324

Patent

active

051838001

ABSTRACT:
An interconnecting method for a semiconductor device which includes the steps of depositing a high-temperature superconductive material over an interlevel insulation layer, and irradiating an energy beam onto a high-temperature superconductive material layer thus formed by the above step so as to effect anneal treatment.

REFERENCES:
patent: 4507852 (1985-04-01), Karulkar
Robinson, "IBM Superconductor Leaps Current Hurdle" Research News, Jun. 5, 1987, p. 1189.
Ramirez, "Superconductors Get into Business," Fortune, Jun. 22, 1987, pp. 114-118.
Business Week Cover Story, "Superconductors", Apr. 6, 1987, pp. 94-100.
Moriwaki et al., "Electrical Properties of Superconducting (La.sub.1-x Sr.sub.x).sub.2 CuO.sub.4 and Ba.sub.2 YCu.sub.3 O.sub.7-8 Thin Films", in High Temperature Super Conductors--Extended Abs., Apr. 23-24, 1987, pp. 85-87.
Rao et al., "Y-Ba-Cu-O superconding Films on Oxidized Silicon", Appl. Phys. Lett. vol. 52, No. 23, Jun. 6, 1988, pp. 1987-1988.
Weber et al., "Laser Processing and Characterization of High-Tc Superconductors", Mat. Res. Soc. Symp. Proc., vol. 99, 1988, pp. 631-634.
Mantese et al., "Rapid Thermal Annealing of High Tc Superconducting Thin Films Formed by Metalorganic Deposition," Appl. Phys. Lett., vol. 52, No. 19, May 9, 1988, pp. 1631-1633.
New Electronics, May 12, 1987, p. 30; P. Judge; "Superconductor Future Heats Up".
IEE Transactions on Magnetics, vol. MAG-23, No. 2, Mar. 1987, pp. 641-648, Tachikawa et al.
Japanese Journal of Applied Physics/Part 2; vol. 27, No. 2; Feb. 1988; pp. L231-L233.

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