Interconnection layer structure in a semiconductor integrated ci

Details Interconnection layer structure in a semiconductor integrated ci Interconnection layer structure in a semiconductor integrated ci

1996-12-18

2000-05-09

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257763, 257764, 257765, 257915, H01L 2348, H01L 2912

Patent

active

06060784&

ABSTRACT:
An interconnection layer extends across at least a macro cell region and at least a circuit region other than the macro cell region, the macro cell region and the circuit region being monolithically integrated into a semiconductor device, wherein the interconnection layer in the macro cell region is thinner than the interconnection layer in the circuit region.

REFERENCES:
patent: 5471093 (1995-11-01), Cheung
patent: 5500558 (1996-03-01), Hayashide
patent: 5753975 (1998-05-01), Matsuno
patent: 5760429 (1998-06-01), Yano et al.

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