Interconnection device between the cells of a pre-implanted hype

Wave transmission lines and networks – Automatically controlled systems – With control of equalizer and/or delay network

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357 51, 357 45, 333247, H01L 27095

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active

050123211

ABSTRACT:
The invention concerns pre-implanted circuits in a rapid semiconductor such as GaAs, comprising a network of cells formed of active and passive components. The cells are supplied but are not interconnected between one another. The interconnection between the cells is made by capacitive or magnetic coupling between two metallization levels separated by an insulating layer. Between a component of a first cell and a component of a second cell, both pre-implanted in a substrate, the interconnection made by means of microstrips supported by the substrate and in ohmic contact with the said components and microstrips supported by an insulating layer, microstrips and insulator forming capacities in the zones where there is covering.

REFERENCES:
patent: 4190854 (1980-02-01), Redfern
patent: 4291326 (1981-09-01), Higuchi et al.
patent: 4418470 (1983-12-01), Naster et al.
patent: 4458215 (1984-07-01), Huang et al.
patent: 4504796 (1985-03-01), Igarashi
patent: 4525732 (1985-06-01), Bayraktaraglu
patent: 4527180 (1985-07-01), Oto
patent: 4543535 (1985-09-01), Ayasli
Rode et al., IEEE, 1983, GaAsIC Symposium, pp. 178-181.
Toyoda et al., Japan J. Appl. Phys. Suppl. 22-1, 1983, pp. 345-348.

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