Interconnecting wire for semiconductor devices

Details Interconnecting wire for semiconductor devices Interconnecting wire for semiconductor devices

1986-05-22

1988-05-31

Dean, R.

Metal treatment

Stock

Aluminum base

148438, 148439, 148440, 428606, C22C 2100

Patent

active

047478896

ABSTRACT:
An interconnecting wire of aluminum alloy for semiconductor devices which as improved ball-forming performance in the ball-bonding process, without any loss of conductivity and corrosion resistance. There is also provided an interconnecting wire for semiconductor devices which is lowered in resistance, with a minimum loss of conductivity and without any adverse effect on the bonding performance. The interconnecting wire contains about 0.1 to 45 wt % of an element having a melting point lower than about 450.degree. C., with the balance being substantially aluminum, or contains about 0.1 to 45 wt % of one more elements having a melting point lower than about 450.degree. C. and about 0.2 to 2 wt % of one or more elements selected from the group consisting of silicon, magnesium, manganese, and copper, with the balance being substantially aluminum.

REFERENCES:
patent: 3753695 (1973-08-01), Lloyd

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