Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2008-03-04
2008-03-04
Lebentritt, Michael (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S067000, C438S107000, C438S406000, C438S455000, C438S622000, C438S623000, C438S624000, C438S625000, C438S626000, C438S686000, C257S758000, C257S759000, C257S760000
Reexamination Certificate
active
07338884
ABSTRACT:
An interconnecting substrate for carrying a semiconductor device, comprising: an insulating layer; an interconnection set on an obverse surface of the insulating layer; an electrode which is set on a reverse surface side of the insulating layer and formed in such a way that, at least, a lateral face of an obverse end of the electrode is all round brought into contact with the insulating layer, while, at least, a reverse surface of the electrode is not in contact with said insulating layer; a via conductor which is disposed on an obverse surface of the electrode and formed in the insulating layer so as to connect this electrode with the interconnection; and a supporting structure on the surface of the insulating layer.
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Baba Kazuhiro
Kikuchi Katsumi
Matsui Koji
Shimoto Tadanori
Lebentritt Michael
Mitchell James M
NEC Corporation
Young & Thompson
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