Interconnect structures with surfaces roughness improving...

Details Interconnect structures with surfaces roughness improving... Interconnect structures with surfaces roughness improving...

2006-09-13

2008-12-16

Williams, Alexander O (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE23145, C257SE23167, C257SE23161, C257SE23116, C257SE21579, C257S680000, C257S773000, C257S758000, C438S629000

Reexamination Certificate

active

07466027

ABSTRACT:
Interconnect structures are provided. An exemplary embodiment of an interconnect structure comprises a substrate with a low-k dielectric layer thereon. A via opening and a trench opening are formed in the low-k dielectric layer, wherein the trench opening is formed over the via opening and the via opening exposes a portion of the substrate. A liner layer is formed on sidewalls of the low-k dielectric layer exposed by the trench and via protions and a bottom surface exposed by the trench via portion, wherein the portion of the liner layer on sidewalls of the low-k dielectric layer exposed by the trench and via protions and the portion of the liner layer formed on a bottom surface exposed by the trench portion comprise different materials. A conformal conductive barrier layer is formed in the trench and via openings, covering the liner layer and the exposed portion of the substrate. A conductive layer is formed on the conductive barrier layer, filling in the trench and via openings.

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