Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-09-20
2011-12-27
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S734000, C257SE23001, C257SE23169, C257SE21576
Reexamination Certificate
active
08084862
ABSTRACT:
The present invention provides an interconnect structure in which a patternable low-k material is employed as an interconnect dielectric material. Specifically, this invention relates to single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric. In general terms, the interconnect structure includes at least one patterned and cured low-k dielectric material located on a surface of a substrate. The at least one cured and patterned low-k material has conductively filled regions embedded therein and typically, but not always, includes Si atoms bonded to cyclic rings via oxygen atoms. The present invention also provides a method of forming such interconnect structures in which no separate photoresist is employed in patterning the patterned low-k material.
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Chen Shyng-Tsong
Lin Qinghuang
Harriston William
International Business Machines - Corporation
Mandala Victor A
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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