Interconnect structures with interlayer dielectric

Details Interconnect structures with interlayer dielectric Interconnect structures with interlayer dielectric

2007-08-20

2010-02-09

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S775000, C257S776000, C438S618000, C438S622000, C438S637000, C438S672000

Reexamination Certificate

active

07659630

ABSTRACT:
The present invention relates to metallic interconnect having an interlayer dielectric thereover, the metallic interconnect having an upper surface substantially free from oxidation. The metallic interconnect may have an exposed upper surface thereon that is passivated by a nitrogen containing compound.

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