Interconnect structures having tantalum/tantalum oxide layers

Details Interconnect structures having tantalum/tantalum oxide layers Interconnect structures having tantalum/tantalum oxide layers

1993-05-19

1995-07-25

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257761, 257762, 174258, H05K 102

Patent

active

054365040

ABSTRACT:
A method of fabricating a high-density multilayer copper/polyimide interconnect structure utilizing a blanket tantalum/tantalum oxide layer that electrically connects all of the electroplating seed layers to the edge of the substrate; upon completion of the electroplating process, the excess tantalum/tantalum oxide layer is etched off to produce isolated conductor lines. A multilayer copper/polyimide interconnect structure may be fabricated by repeating this fabrication sequence for each layer.

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