Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-06-07
1997-09-09
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257758, 257762, 257763, 257764, 257767, 257773, 257915, H01L 2352, H01L 23535
Patent
active
056660073
ABSTRACT:
A multilevel interconnect structure which has a first horizontal metallic conductor disposed on the top of a previously formed first contact/via dielectric where the contact/via dielectric contains a contact/via hole. A horizontal, interconnect is deposited over the first contact/via dielectric and has a first surface defined by the thickness and linewidth of the horizontal interconnect. A vertical metallic conductor is deposited in the contact/via hole to form a contact/via plug which extends through the dielectric and contacts the first surface of the horizontal interconnect. The process may be used to form additional levels and to form a plurality of similar horizontal and vertical metallic interconnects.
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Brown Peter Toby
National Semiconductor Corporation
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