Interconnect structures containing blocked segments to minimize

Details Interconnect structures containing blocked segments to minimize Interconnect structures containing blocked segments to minimize

1994-03-11

1995-08-08

Ryan, Patrick J.

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

257750, 257762, 257763, 257764, 257767, 257771, 1741262, 174261, B32B 900

Patent

active

054397316

ABSTRACT:
Interconnect or metallization structures for integrated circuits on semiconductor chips contain blocked conductor segments to limit atomic transport from one segment to another thus minimizing stress migration and electromigration damage. Since the blocked conductor segments prevent atomic transport between two neighboring segments, the total amount of atoms and vacancies available for hillock and void growth in a segment can be controlled by the length of the segment. The conductor segments are made of high electrical conductance metals, such as aluminum, copper or gold based alloys, and are separated by very short segments of a high melting temperature refractory metal or alloy. Because of their high melting temperatures, refractory metals or alloys suppress atomic transport. The interconnect structures can be fabricated by conventional lithographic and deposition techniques.

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