Interconnect structure with hard mask and low dielectric constan

Details Interconnect structure with hard mask and low dielectric constan Interconnect structure with hard mask and low dielectric constan

1996-06-26

1999-03-23

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257776, 257760, 438623, 438634, H01L 23485

Patent

active

058864105

ABSTRACT:
An interconnect system is provided. The interconnect system includes a silicon substrate and a first dielectric layer formed upon the silicon substrate. The interconnect system also includes a first level of at least two electrically conductive lines formed upon the first dielectric layer. The interconnect system further includes a region of low dielectric constant material formed between the at least two electrically conductive lines. The interconnect system also includes a first hard mask formed upon the polymer region.

REFERENCES:
patent: 4767724 (1988-08-01), Kim et al.
patent: 5155576 (1992-10-01), Mizushima
patent: 5399508 (1995-03-01), Nowak
patent: 5438006 (1995-08-01), Chang et al.
patent: 5466639 (1995-11-01), Ireland
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5488011 (1996-01-01), Figura et al.
patent: 5510652 (1996-04-01), Burke et al.
patent: 5548159 (1996-08-01), Jeng
patent: 5552638 (1996-09-01), O'Connor et al.
patent: 5604380 (1997-02-01), Nishimura et al.
patent: 5616959 (1997-04-01), Jeng
patent: 5661344 (1997-08-01), Havemann et al.
IBM Technical Disclosure Statement, vol. 37, No. 06A, Jun. 1994, pp. 53-54.
Yoshio Homma et al., Using Selective CMP with Low Permittivity Organic SOG to Achieve Low Capacitance Multilevel Interconnection Jun. 27-29, 1995 VMIC Conference 1995 ISMIC-104/95/0457.

Affiliated with

Also associated with

Rating

Interconnect structure with hard mask and low dielectric constan does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Interconnect structure with hard mask and low dielectric constan, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interconnect structure with hard mask and low dielectric constan will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2129076