Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-10-11
1999-07-20
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257750, 257758, 257767, 257771, H01L 2348, H01L 2352, H01L 2940
Patent
active
059259337
ABSTRACT:
An interconnect structure and method for an integrated circuit chip for resisting electromigration is described incorporating patterned interconnect layers of Al or Al--Cu and interlayer contact regions or studs of Al.sub.2 Cu between patterned interconnect layers. The invention overcomes the problem of electromigration at high current density in the interconnect structure by providing a continuous path for Cu and/or Al atoms to move in the interconnect structure.
REFERENCES:
patent: 4307179 (1981-12-01), Chang et al.
patent: 4335506 (1982-06-01), Chiu et al.
patent: 4884123 (1989-11-01), Dixit et al.
patent: 5010039 (1991-04-01), Ku et al.
patent: 5071714 (1991-12-01), Rodbell et al.
patent: 5110759 (1992-05-01), Ryoichi Mukai
patent: 5130274 (1992-07-01), Harper et al.
patent: 5171642 (1992-12-01), DeHaven et al.
patent: 5243221 (1993-09-01), Ryan et al.
patent: 5300307 (1994-04-01), Frear et al.
patent: 5455195 (1995-10-01), Ramsey et al.
patent: 5565707 (1996-10-01), Colgan et al.
B. Luther et al., Proc. IEEE, VLSI Multilevel Interconnections Conf., Santa Clara, CA, Jun. 8-9, 1993, pp. 15-21.
Anonymous, "L1 and V1 Stud Metal Rework Procedure", Research Disclosure 31758; Sep. 1990.
J. Havas et al., "Self-Aligning Metal Land and Feed-Through Structure", IBM TDB, vol. 27, No. 7B, Dec. 1984, pp. 4159-4160.
A. Nagy et al., "Planarized Inorganic Interlevel Dielectric for Multilevel Metallization -Part I", Solid State Technology, vol. 34, No. 1, pp. 53-56, Jan. 1991.
Colgan Evan George
Rodbell Kenneth Parker
Totta Paul Anthony
White James Francis
Clark Jhihan B.
International Business Machines - Corporation
Saadat Mahshid
Trepp Robert M.
LandOfFree
Interconnect structure using Al.sub.2 -Cu for an integrated circ does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Interconnect structure using Al.sub.2 -Cu for an integrated circ, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interconnect structure using Al.sub.2 -Cu for an integrated circ will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1324194