Interconnect structure using Al.sub.2 -Cu for an integrated circ

Details Interconnect structure using Al.sub.2 -Cu for an integrated circ Interconnect structure using Al.sub.2 -Cu for an integrated circ

1996-10-11

1999-07-20

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257758, 257767, 257771, H01L 2348, H01L 2352, H01L 2940

Patent

active

059259337

ABSTRACT:
An interconnect structure and method for an integrated circuit chip for resisting electromigration is described incorporating patterned interconnect layers of Al or Al--Cu and interlayer contact regions or studs of Al.sub.2 Cu between patterned interconnect layers. The invention overcomes the problem of electromigration at high current density in the interconnect structure by providing a continuous path for Cu and/or Al atoms to move in the interconnect structure.

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