Interconnect structure for protecting a transistor gate from cha

Details Interconnect structure for protecting a transistor gate from cha Interconnect structure for protecting a transistor gate from cha

1997-12-23

2000-03-07

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257355, 257356, 257358, 257759, H01L 2348, H01L 2352, H01L 2362

Patent

active

060344334

ABSTRACT:
A method and apparatus for preventing charge damage to a protected structure during processing of a semiconductor device. A first source/drain region of a protection transistor is coupled to a protected transistor gate. A second source/drain region of the protection transistor is coupled to ground. The protection transistor is then turned on during the processing of the device to ground the protected transistor gate.

REFERENCES:
patent: 5375095 (1994-12-01), Yamada et al.
patent: 5577004 (1996-11-01), Leshem
patent: 5623640 (1997-04-01), Nakabo
patent: 5650975 (1997-07-01), Hamade et al.
patent: 5668755 (1997-09-01), Hidaka
patent: 5694355 (1997-12-01), Skjaveland et al.
patent: 5825682 (1998-10-01), Fukui

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