Interconnect structure for coupling semiconductor regions and me

Details Interconnect structure for coupling semiconductor regions and me Interconnect structure for coupling semiconductor regions and me

1992-08-19

1994-01-18

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257 24, 257183, H01L 29161, H01L 29205

Patent

active

052801802

ABSTRACT:
A semiconductor device having a lateral interconnect or via formed by quantum well comprising a semiconductor material is provided. The lateral interconnect (17, 18, 19) formed by a quantum well comprising a first semiconductor material composition. A first semiconductor region (11, 12, 13) comprising a second material type is formed adjacent to the lateral interconnect (17, 18, 19). A second semiconductor region (23, 24, 26) comprising the second material type is adjacent to the lateral interconnect (17, 18, 19) so that the lateral interconnect (17, 18, 19) separates the first (11, 12, 13) and second (23, 24, 26) semiconductor regions. The first (17, 18, 19) and second (23, 24, 26) semiconductor regions have a first quantized energy level that is substantially equal. The lateral interconnect (17, 18, 19) has a first quantized energy level capable of alignment with the quantized energy levels of the first (11, 12, 13) and second (23, 24, 26) semiconductor regions.

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Takahashi et al., "Lateral Quantum Well Wires Fabricated by Selective Metal organic Chemical Vapor Deposition," App. Phys. Lett., vol. 57, #12-17-Sep. 1990, pp. 1209-1211.
Beresford et al., "Polytype Heterostructures for Electron Tunneling Devices," IEDM-89, pp. 547-550 (1989).

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