Interconnect structure for an integrated circuit and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S773000, C257S774000, C257S775000, C257S776000, C257S762000

Reexamination Certificate

active

06919637

ABSTRACT:
An interconnect structure for an integrated circuit having several levels of conductors is disclosed. Dielectric pillars for mechanical support are formed between conductors in adjacent layers at locations that do not have vias. The pillars are particularly useful with low-k ILD or air dielectric.

REFERENCES:
patent: 5783864 (1998-07-01), Dawson et al.
patent: 2002/0145201 (2002-10-01), Armbrust et al.

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