Interconnect structure

Details Interconnect structure Interconnect structure

2008-09-30

2011-11-01

Clark, S. V. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000, C257S758000

Reexamination Certificate

active

08049336

ABSTRACT:
One or more embodiments relate to a semiconductor device, comprising: a Si-containing layer; a barrier layer disposed over the Si-containing layer, the barrier layer comprising a compound including a metallic element; a metallic nucleation_seed layer disposed over the barrier layer, the nucleation_seed layer including the metallic element; and a metallic interconnect layer disposed over the nucleation_seed layer, the interconnect layer comprising at least one element selected from the group consisting of Cu (copper), Au (gold), and Ag (silver).

REFERENCES:
patent: 2002/0090811 (2002-07-01), Kim et al.
patent: 2006/0046453 (2006-03-01), Collins et al.
patent: 2008/0254617 (2008-10-01), Adetutu et al.
G. Van Den Bosch, S. Demuynck, Z. Tökei, G. Beyer, M. Van Hove, G. Groeseneken; Impact of copper contacts on CMOS front-end yield and reliability; 2006 IEEE; 1-4244-0439-8/06.
Wei-Min Li, Hessel Sprey, Ivo Raaijmakers, Devendra Kumar, Wonyong Koh; Meeting the Cu diffusion barrier challenge using ALD tungsten nitride carbide; Solid State Technology, The International Magazine for Semiconductor Manufacturing, 2008.

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