Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-11-22
2010-12-07
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S522000, C257S745000, C257S753000, C257S757000, C257S768000, C438S167000, C438S172000, C438S170000, C438S619000
Reexamination Certificate
active
07847410
ABSTRACT:
An interconnect of the group III-V semiconductor device and the fabrication method for making the same are described. The interconnect includes a first adhesion layer, a diffusion barrier layer for preventing the copper from diffusing, a second adhesion layer and a copper wire line. Because a stacked-layer structure of the first adhesion layer/diffusion barrier layer/second adhesion layer is located between the copper wire line and the group III-V semiconductor device, the adhesion between the diffusion barrier layer and other materials is improved. Therefore, the yield of the device is increased.
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Chang Edward Yi
Chang Huang-Choung
Lee Cheng-Shih
Jianq Chyun IP Office
Lee Jae
National Chiao Tung University
Richards N Drew
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