Patent
1990-04-02
1992-04-21
Hille, Rolf
357 65, 357 59, 357 67, 357 34, H01L 2702
Patent
active
051073218
ABSTRACT:
A BiCMOS device is revealed. The BiCMOS device achieves improved performance through the use of wrap-around silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS.
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Ilderem Vida
Jerome Rick C.
Solheim Alan G.
Hille Rolf
National Semiconductor Corporation
Potter Roy
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