Semiconductor device manufacturing: process – Making device array and selectively interconnecting – With electrical circuit layout
Reexamination Certificate
2007-11-13
2007-11-13
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
With electrical circuit layout
C438S599000
Reexamination Certificate
active
11244137
ABSTRACT:
In an interconnect layout 100, the first gate pattern, the second gate pattern, the first dummy pattern, and the second dummy pattern are arranged so that, if a wavelength of a light used to expose the first gate pattern and the second gate pattern is λ, natural numbers are m1, m2, and m3, the first predetermined distance is P1, the second predetermined distance is P2, the third predetermined distance is P3, a design value of the first predetermined distance is P1′, a design value of the second predetermined distance is P2′, and a design value of the third predetermined distance is P3′, then the first predetermined distance satisfies relationships of P1=m1λ and P1′−0.1λ≦P1≦P1′+0.1λ, the second predetermined distance satisfies relationships of P2=m2λ and P2′−0.1λ≦P2≦P2′+0.1λ, and the third predetermined distance satisfies relationships of P3=m3λ and P3′−0.1λ≦P3≦P3′+0.1λ.
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NEC Electronics Corporation
Picardat Kevin M.
Young & Thompson
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