Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-08-21
2007-08-21
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S614000
Reexamination Certificate
active
11419548
ABSTRACT:
An improvement to a method of forming an integrated circuit. An etch stop layer is formed to overlie the front end processing layers of the integrated circuit. Support structures are formed that are disposed so as to support electrically conductive interconnects on various levels of the integrated circuit. Substantially all of the non electrically conductive layers above the etch stop layer that were formed during the fabrication of the interconnects are removed.
REFERENCES:
patent: 5559055 (1996-09-01), Chang et al.
Catabay Wilbur G.
Gu Shiqun
Hsia Wei-Jen
Lin Hong
Lo Wai
Dang Phuc T.
LSI Corporation
Luedeka Neely & Graham
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