Interconnect connecting a diffusion metal layer and a power...

Details Interconnect connecting a diffusion metal layer and a power... Interconnect connecting a diffusion metal layer and a power...

2006-09-19

2009-08-25

Pizarro, Marcos D. (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S421000, C257SE21665

Reexamination Certificate

active

07579196

ABSTRACT:
A giant magnetoresistance (GMR) pad on the same level of GMR memory bit layer is used as an intermediate connection for plugs between the GMR pad and an underlying diffusion metal layer. A single large power metal plug is used to connect the GMR pad and the overlying power plane metal.

REFERENCES:
patent: 6784091 (2004-08-01), Nuetzel et al.
patent: 2005/0023581 (2005-02-01), Nuetzel et al.
patent: 2005/0145909 (2005-07-01), Giebeler et al.
patent: 2006/0081954 (2006-04-01), Tondra et al.
patent: 2006/0183318 (2006-08-01), Liu et al.

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