Interconnect and contact system for metal-gate MOS VLSI devices

Details Interconnect and contact system for metal-gate MOS VLSI devices Interconnect and contact system for metal-gate MOS VLSI devices

1984-06-25

1988-04-05

Clawson, Jr., Joseph E.

Textiles: ironing or smoothing

387 71, 387 91, 387 41, H01L 2978

Patent

active

047362332

ABSTRACT:
A simplified process for metal gate and contact/interconnect system for MOS VLSI devices employs a refractory metal structure for the gate, including a thick layer of tungsten alone, with stress and adhesion controlled by the deposition conditions. The metal gate receives sidewall oxide spacers during a metal-cladding operation for the source/drain areas. Contacts to the source/drain region include a molybdenum/tungsten stack and a top layer of gold.

REFERENCES:
patent: 4141222 (1979-02-01), Sigg et al.
patent: 4384301 (1983-05-01), Tasch et al.

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