Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-09-01
1997-07-22
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 12, 257 23, 257 9, H01L 2906
Patent
active
056506341
ABSTRACT:
A submatrix of semiconductor material contains plural electron conduction annels in either or both series and parallel arrangements. Electrons in the channels are confined by the submatrix and a surrounding main matrix provides photon confinement within the submatrix for nonequilibrium phonons which are mutually interchanged between channels. The confinement enhances the efficiency of energy and momentum transfer by means of nonequilibrium phonons. Embodiments of the invention as a transformer, bistable switch, controlled switch and amplifier are disclosed.
REFERENCES:
patent: 5264711 (1993-11-01), Dutta et al.
patent: 5289013 (1994-02-01), Goronkin
patent: 5374831 (1994-12-01), Dutta et al.
Dutta Mitra
Kochelap Viatcheslav
Mickevicius Rimvydas
Mitin Vladimir V.
Stroscio Michael A.
Anderson William H.
The United States of America as represented by the Secretary of
Tran Minh-Loan
Zelenka Michael
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