Interband tunneling field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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Other Related Categories

257 20, H01L 29161, H01L 29205, H01L 29225

Type

Patent

Status

active

Patent number

054101603

Description

ABSTRACT:
A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by barrier layers comprising wide bandgap material (18) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a P-type drain region (22b). Each channel is also coupled to an N-type source region (25b). With appropriate gate bias on a gate electrode (17), quantized energy levels in the channels (12, 14, 16) are aligned providing peak current flow by electrons tunneling from the conduction band of one or more N-channels (12, 16) to the valence band of the P-channel (14).

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Sercel et al., `Type two broken gap quantum wires . . . `, Appl Phys Lttr, 57(15), pp. 1569-1571, 806 & 90.
Beresford et al., `Interband tunneling . . . heterostructures`, Appl Phys Lttr, 56(10), pp. 952-954, 5 Mar. 1990.
Zhu et al., `Exitonic Insulator Transition . . . `, Solid State Comm, vol 75 No. 7, pp. 595-599, 1990.

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