Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-10-15
1993-11-02
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 30, 257104, 257105, 257 38, H01L 2988
Patent
active
052586251
ABSTRACT:
An interband single-electron tunnel transistor utilizes an interband single-electron tunneling phenomenon between a valence band and a conduction band through a p-n junction. The transistor includes the combination of microcapacities as fundamental constituent elements each formed by joining a p-type semiconductor material doped with an impurity in the degree of concentration with which a Fermi level overlaps a valence band and an n-type semiconductor material doped with an impurity in the degree of concentration with which the Fermi level overlaps a conduction band. The microcapacity includes a p-n junction having a junction area with which interband electron tunneling is inhibited due to Coulomb blockade.
REFERENCES:
Likharev, "Single-Electron Transistors:Electrostatic Analogs of the DCS quids," IEEE Transactions on Magnetics, vol. MAG-23, No. 2, Mar., 1987, pp. 1142-1145.
Landauer, "Can We Switch By Control of Quantum Mechanical Transmission?", Physics Today, Oct., 1989, pp. 119-121.
Takeda, "Reliability and Device Structure in Submicron MOS Devices," Tech. Reports of IECIE, SDM90-119, Nov. 1990, pp. 1-8.
Ihara Sigeo
Kamohara Shiroo
Katayama Kozo
Toyabe Toru
Yamamoto Shuichi
Hitachi , Ltd.
Mintel William
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