Interband single-electron tunnel transistor and integrated circu

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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257 25, 257 27, 257204, 257105, H01L 2988

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active

054224969

ABSTRACT:
An interband single-electron tunnel/transistor utilizes an interband single-electron tunneling phenomenon between a valence band and a conduction band through a p-n junction. The transistor includes the combination of microcapacities as fundamental constituent elements each formed by joining a p-type semiconductor material doped with an impurity in the degree of concentration with which a Fermi level overlaps a valence band and an n-type semiconductor material doped with an impurity in the degree of concentration with which the Fermi level overlaps a conduction band. The microcapacity includes a p-n junction having a junction area with which interband electron tunneling is inhibited due to Coulomb blockade.

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Likharev, "Single-Electron Transistors:Electrostatic Analogs of the DC Squids", IEEE Transactions on Magnetics, vol. MAG-23, No. 2, Mar., 1987, pp. 1142-1145.
Landauer, "Can We Switch by Control of Quantum Mechanical Transmission?, " Physics Today, Oct., 1989, pp. 119-121.
Takeda, "Reliability and Device Structure in Submicron MOS Devices," Tech. Reports of IECIE, SDM90-119, Nov. 1990, pp. 1-8.
"LSI", Journal of Physics of Japan, vol. 46, No. 5, 1991, pp. 352-359.

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